September 2017

Samsung to soon start mass producing 28nm embedded MRAM

Digitimes reports that Samsung Foundry will soon start mass producing MRAM chips using Samsung's 28nm fully depleted silicon-on-insulator (FD-SOI) process technology.

Digitimes says that Samsung has collaborated with NXP on this project. Samsung has completed the tape-out of its embededd MRAM which will be first applied to NXP's new low-power i.MX-series chipset targeted at automotive, multimedia and display panel applications.

Read the full story Posted: Sep 28,2017

GlobalFoundries: 22nm eMRAM technology is now available, prototyping to start in Q1 2018

In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform.

GF says that its eMRAM technology is the industry's most advanced embedded memory solution, and it provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things, and automotive.

Read the full story Posted: Sep 22,2017