Researchers suggest using stochastic MRAM elements to create highly efficient AI neural network devices

Researchers from Northwestern University developed a new method of building artificial neural networks using MRAM-based stochastic computing units. The researchers say that this design could enable AI devices that are highly energy efficient.

MTJ-based stochastic computing unit structure (Northwestern University)

Embedded MRAM technologies are being adopted at major foundries, which enable the use of these technologies for unconventional computing architectures that use the stochasticity of MRAM cells (rather than their nonvolatility), to perform energy-efficient computing operations. MRAM cells exhibit stochastic switching characteristics, which is a challenge for reliable memory devices. But for neural networks, this can be taken advantage of if the MTJs are appropriately designed.

Read the full story Posted: Jul 07,2021

Researchers developed a promising antiferromagnetic MRAM device structure

Researchers from Northwestern University and the University of Messina in Italy developed a new MRAM memory device composed of antiferromagnetic materials, which could be beneficial for use in AI systems and cryptocurrency mining.

Magnetic switching with antiferromagnet IrMn3 - device design

Antiferromagnetic materials (AFM), offer inherently faster dynamics than ferromagnetic materials (FM), have no macroscopic magnetic poles and can be scaled much better. AFM-based memory cannot be erased with external magnetic fields which could prove to be a major security advantage.

Read the full story Posted: Jun 27,2021

Lucid Motors adopted Everspin's MRAM in its Lucid Air all-electric sedan

Everspin Technologies announced that Lucid Motors has designed-in the company's 256 Kb MRAM into its master powertrain system for its Lucid Air all-electric luxury sedan.

Everspin Technologies chip photo

Everspin's The MR25H256AMDF MRAM device is designed for automotive applications and is qualified to the AEC-Q100 Grade 1 standard for use in demanding memory applications that require extreme reliability in critical data capturing systems.

Read the full story Posted: Jun 16,2021

Avalanche announces space-grade Gigabit-density STT-MRAM

pMTJ STT-MRAM developer Avalanche Technology announced its third-generation 1Gb space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices. The company says that these new devices enable customers to design unified memory architecture systems for high reliability aerospace applications, in extremely small form factors.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

Avalanche's 2nd-Gen P-SRAM evaluation kit

The new Parallel x32 Space Grade series is offered in 512Mb, 1Gb, 2Gb and 4Gb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. Data is always non-volatile with >10^14 write cycles endurance and 10-year retention at 125°C. All four density options are available in a small footprint 142-Ball FBGA (17mm x 11mm) package.

Read the full story Posted: Jun 16,2021

Everspin reports its financial results for Q1 2021

Everspin Technologies announced its financial results for Q1 2021. Revenues in the quarter increased 1.7% from last year to $10.3 million. The net loss in the quarter was $0.5 million, and the company reported a positive cash flow (of $1.6 million) for the third consecutive quarter.

Everspin 1Gb STT-MRAM chip photo

Everspin estimates that its Q2 2021 revenues will be in the range of $11 million to $12 million.

Read the full story Posted: May 07,2021

TSMC shows its eMRAM technology roadmap

During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap:

TSMC memory roadmap (Persistant Mmemory Summit 2021)

As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory (this is interesting as before it was revealed that the company is developing 16nm MRAM). Finally eMRAM is touted as a possible replacement for configuration memory (eFUSE / OTP / Flash).

Read the full story Posted: May 06,2021

Avalanche starts production of space-grade 16-64Mb STT-MRAM devices

pMTJ STT-MRAM developer Avalanche Technology announced that it is now shipping new space-grade parallel asynchronous x16-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM technology.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

Avalanche says that its STT-MRAM devices are smaller and more efficienct compared to Toggle MRAM based products, currently adopted in aerospace applications. The Parallel x16 Space Grade series is offered in 16Mb, 32Mb and 64Mb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. All three density options currently in production and available within industry standard lead times.

Read the full story Posted: May 05,2021

Hprobe announces a significant order for MRAM testing equipment from a tier-1 semiconductor manfacturor

Hprobe, a developer of testing equipment for magnetic devices, announced a 'significant' order for a wafer-level magnetic tester (the company's IBEX tester) from a tier-1 semiconductor manufacturer.

The equipment will be used for research and development of magnetic materials and devices, which represents a very promising technology for MRAM chips and magnetic sensors. The IBEX platform is compatible with 200mm and 300mm automated wafer probers, and is dedicated to testing MRAM magnetic tunnel junctions, bit cells based on STT-MRAM, SOT-MRAM, and Voltage Controlled (VC-MRAM) technologies.

Read the full story Posted: Apr 28,2021

ISI ships its first SOT-MRAM tester system

Integral Solutions International (ISI) announced its first shipment of a commercial SOT-MRAM tester system. This new equipment was developed by integrating a commercial pulser with ISI’s proprietary bias-tee and measurement electronics.

ISI says that the new tester system generates pulses as narrow as 300pS, suitable for R&D applications which require extremely narrow pulse widths. In parallel, ISI is also developing its proprietary Gen-4 Pulser System, which will provide high-throughput and cost-effective measurement solutions with the flexibility of testing either STT-MRAM or SOT-MRAM devices. The Gen-4 system is expected to be released in the fall of 2021.

Read the full story Posted: Apr 22,2021