Everspin repots its Q1 2019 financial results

Everspin announced its financial results for Q1 2019. Revenues in the quarter were to $10 million (down from $14.9 in Q1 2018). Net loss was $4.3 million (up from $1.3 million in Q1 2018).

At the end of the quarter, Everspin had $18.5 million in cash and equivalents. For the next quarter (Q2 2019), Everspin expects revenues to be in the range of $9.6 million to $10 million.

Hprobe teams up with IMEC to develop SOT-MRAM testing tools

Hprobe, a developer of testing equipment for magnetic devices, announced that it has teamed up with the IMEC research institute to jointly extend Hprobe's fast testing protocols for SOT-MRAM devices.

Hprobe wafer prober system photo

Hprobe has already begun to optimize its test flow for SOT-MRAM devices in order to bring the characterization and testing to an industrial level with the primary objective to reduce the testing time while maximizing yield.

NTHU researchers manage to manipulate exchange bias by spin-orbit torque

Researchers from Taiwan's National Tsing Hua University (NTHU)managed to use a spin current to manipulate the exchange bias in Spin-Orbit Torque memory (SOT-MRAM). The researchers say that this has been a long-time challenge in the field.

MRAM chip Manipulating exchange bias by spin-orbit torque (NTHU)

To achieve this, the researchers added a platinum layer under the ferromagnetic and antiferromagnetic layers of the MRAM device. The researchers patented this technique before publishing their findings.

Everspin reported its Q4 2018 financial results

Everspin announced its financial results for Q4 2018. Revenues in the quarter grew 21% from last year to reach $12.3 million, while total year revenues in 2018 grew 38% from 2017 to reach $49.4 million. Net loss in the quarter was $3.5 million (down from $4.4 million in Q4 2017). Net loss for the whole 2018 was $17.8 million (down from $21.1 million in 2017).

Everspin says that it has increased the production volume of its 40nm 256Mb STT-MRAM in support of its lead flash array customer. Everspin ended 2018 with with cash and cash equivalents of $23.4 million.

Samsung starts shipping 28nm embedded MRAM memory

Samsung announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. Samsung says that its eMRAM memory module offers higher performance and endurance when compared to eFlash, and can be integrated into existing chips.

Samsung eMRAM image

Samsung details that its eMRAM is 1,000 times faster than its eFlash memory, and it does not require an erase cycle before writing data (unlike Flash memory). The voltage used is also lower - and in total eMRAM consumes 1/400 the energy compared to eFlash for the writing process. Samsung's MRAM capacity, though, is lower than its 3D Xpoint, DRAM and NAND flash.

Intel says its embedded 22nm MRAM is production ready

In October 2018 Intel revealed that it is developing embedded MRAM - and that the company has successfully integrated embedded MRAM into its 22nm FinFET CMOS technology on full 300mm wafers.

Intel 22nm eMRAM slide (Feb 2019)

Now Intel gave more details on its embedded STT-MRAM, and said that the technology is ready for high-volume manufacturing. Intel said it has used a "write-verify-write" scheme and a two-stage current sensing technique to create 7Mb perpendicular STT-MRAM arrays in its 22FFL FinFET process.