New four-state MTJ architecture may lead to multi-level MRAM

An international team of researchers led by Israel's Bar Ilan University have developed a new type of MTJ that has four resistance states. The researchers also demonstrated how it is possible to switch between these four different states using spin currents.

The four-state design uses a structure that is in the form of two crossing ellipses instead of one of the standard magnetic layers of the MTJ. Such a design could be used to create multi-level MRAM which stores data more densely compared to current MRAM memories which only have two states in each MTJ.

Spin Memory announces the Universal Selector, said to significantly improve existing and emerging memory technology capabilityies

Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability and density.

MRAM by Spin Memory photo

Spin Memory’s Universal Selector is a selective, vertical epitaxial cell transistor whose channel has a low enough doping concentration that it operates in full depletion. For MRAM memory, the Universal Selector enables manufacturers to create 1T1R memory bitcells of 6F2 – 10F2 (6F2 – 10F2), enabling manufacturers to embed up to five times more memory in the same area footprint with minimal additional wafer processing costs.

Everspin reports its financial results for Q2 2020

Everspin Technologies reported its financial results for Q2 2020. Total revenues reached $11.8 million, up 37% from Q2 2019, and the GAAP net loss was $1.3 million (compared to a net loss of $3.7 million in Q2 2019). Cash and equivalents at the end of Q2 2020 were $12.9 million.

Everspin 1Gb STT-MRAM chip photo

Everspin says it has extended its momentum into the second quarter, with record revenues of its 1Gb STT-MRAM product. Looking into Q3, Everspin says it sees a delay in new product introduction plans by customers, and so sees its revenues between $10 million and $10.8 million.

Spin Memory raised $8.3 million as it extends its Series B Funding Round

Spin Memory (previously Spin Transfer Technologies) announced that it has raised $8.3 million in an extension to its Series B funding. The company's recent investors in the company participated in this round, out of which Allied Minds invested $4 million.

The new funding includes Arm, Applied Ventures (the VC arm of Applied Materials) and Abies Ventures. Spin Memory says that the additional funding will support the company's MRAM R&D.

ITRI transfers its 200 mm SOT-MRAM technology to chipmakers in Taiwan

Digitimes reports that Taiwan's Industrial Technology Research Institute (ITRI) has been developing spin-orbit torque MRAM (SOT-MRAM) for many years, and is now transferring this technology to local chipmakers in Taiwan.

According to Digitimes , ITRI has established a platform for its SOT-MRAM technology certification and trial runs on 8-inch wafers. The report does not detail which companies are licensing ITRI's technology.

Researchers add YSZ layers to MRAM devices to increase efficiency and speed

Researchers from the Korea Institute of Science and Technology (KIST) have managed to drastically incraese the speed of MRAM devices while reducing the power consumption by adding a layer of yttria-stabilized zirconia (YSZ) to MRAM devices.

KIST ultra-low power and high-speed MRAM prototype

The YSZ layer, which has high ion conductivity helps inject hydrogen ions into the MRAM cell. This resulted in an increase in the speed of the spin alignment direction changes 100-fold.

Successful MRAM Production Requires Good Magnetic Test Equipment

This is a sponsored post by Integral Solutions Int'l

MRAM is likely to be the most promising next-generation non-volatile memory technology today. Toggle MRAM and STT-MRAM are already entering the market, gaining market share in many applications. Next-generation MRAM technologies, such as SOT-MRAM could enable the replacement of even the fastest SRAM applications, with higher densities.

MRAM Manufacturing Process Flow (Coughlin)Source: Coughlin Associates, 2019

The MRAM production process has many stages, as device architecture is relatively complex, with a magnetic cell (frontplane) fabricated on top of a CMOS backplane. (use Figure 2 or Figure 3 from Coughlin). Measurement and characterization of devices are highly important, and the production of MRAM memories depend on measurement tools are are specialized for MRAM and STT-MRAM measurements.