Grandis

Grandis Awarded DARPA Contract To Develop STT-MRAM

mram — Wed, 29 Oct 2008 05:18:22 -0500

Grandis announced that it has been awarded $6.0 million from the Defense Advanced Research Projects Agency (DARPA) for the initial phase of research to develop spin-transfer torque random access memory (STT-RAM) chips (for the 45 nm technology node and beyond). The total value of the effort, if all phases of the development program are completed, could be up to $14.7 million over four years.

Hynix licenses Grandis' STT-RAM technology

mram — Wed, 02 Apr 2008 00:50:28 -0500

Hynix Semiconductor and Grandis have signed a license agreement for memory products involving Grandis' patents and intellectual property (IP) in the spin-transfer torque random access memory (STT-RAM) arena.

Hynix and Grandis have also entered into a collaborative agreement to jointly integrate Grandis' STT-RAM technology into Hynix' future memory products.

Grandis gets new CEO, says will be soon ready to go to market

mram — Sun, 28 Jan 2007 01:21:23 -0600

Grandis announced it has appointed Farhad Tabrizi as the company’s president and chief executive officer (CEO). Tabrizi assumes the position from William Almon, Grandis co-founder, who remains a major shareholder.

Renesas Technology and Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer

mram — Wed, 30 Nov 2005 00:00:00 -0600

Renesas and Grandis have agreed to collaborate on the development of 65 nm process MRAM employing spin torque transfer writing technology. Renesas Technology will start to ship microcomputers and SoC products incorporating 65 nm process STT-RAM(TM) in the near future.