GrandisSamsung acquires Grandis
Grandis licensed their technology to several companies. We know that Hynix licensed it in 2008. The company was also collaborating with Renesas technologies. Hynix and Grandis were developing a compact in-plane MTJ based STT-RAM device that uses modified DRAM processes at 54nm.
IBM, Samsung and Hynix-Grandis report STT-MRAM research progressDuring the International Electron Device Meeting (IEDM) exhibition we got some updates about STT-MRAM research done at IBM, Samsung and Hynix-Grandis (who are researching STT-MRAM together). IBM is working together with TDK and has presented a new 4-kbit perpendicular STT-MRAM array using tunnel junctions. Samsung has presented an on-axis MRAM with a novel MTJ, which they say open he way towards sub-30nm scaling. Using ferromagnetic electrode and a different MTJ structure design, Samsung think that they can scale this to a sub-20nm level.
Grandis to develop non-volatile spin logic applications
Development work will focus on integrating magnetic tunnel junction (MTJ) materials capable of sensing very small magnetic fields with nano-magnets performing logic operations. The goal is to demonstrate non-volatile spin logic circuits operating at ultra-fast speeds of less than 1 nanosecond and ultra-low power consumption of less than 10 atto-Joules per operation. Such performance coupled with the inherent non-volatility of spin logic devices will enable not just significant reductions in the active power consumption of microprocessors but also the virtual elimination of standby power consumption.
Hitachi's VP of engineering moves to Grandis
Grandis has been recently awarded a $8.6 million project for STT-RAM chip development from US's DARPA.
Grandis awarded $8.6 million from DARPA for a 2nd phase STT-RAM research project
Phase 2 will focus on test of verification of STT-RAM integrated memory arrays.
Crocus and Grandis present their MRAM tech at the Flash Memory Summit 2009
Crocus Technologies presented their TAS MRAM design which is targeted at SRAM and flash applications. Their product compared to SRAM at a 25% smaller cell, adding Non-Volatile capability, and a zero standby current. The product compared to NAND flash by having a smaller cell and only 1X area overhead for controlling circuitry. It is currently being built on a 130nm node and can be scaled. It is targeted at Cache memory, data logging, medical instrumentation, casino gaming and industrial control applications. They are targeting several business models - selling the standard product ICs, licensing IP a process technology licensing service and providing a foundry service.
Grandis Opens New Fabrication Facility for STT-RAM
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