Technical / Research

BAE Systems to Develop Nano-Sensor Technology in Agreement with Micromem

mram — Tue, 01 Jul 2008 01:00:03 -0500

BAE Systems, under an agreement with Micromem, will co-produce nano-sensor technology that will leverage both companies’ expertise for use in military, commercial, and homeland security applications.

As a foundry and business development partner with Micromem Applied Sensor Technologies, BAE Systems’ Microelectronics Center in Nashua, New Hampshire, will further develop Micromem designs and manufacturability for advanced magnetic random-access memory (MRAM) products. The goal is to bring the designs to maturity and begin production of gallium arsenide-based nano-sensors that offer features such as very high-speed and low-power capability, radiation-hardness, and overall robustness.

Samsung and Hynix to launch STT-MRAM JV in September, expect the chip to mature around 2012

mram — Wed, 25 Jun 2008 00:51:52 -0500

Samsung and Hynix are to launch their STT-RAM JV in September (after having announced their intentions in January 2008).

NVE notified of MRAM patent grant

mram — Tue, 24 Jun 2008 07:20:10 -0500

NVE Corporation has been notified by the U.S. Patent and Trademark Office of the expected grant today of two patents relating to spintronics.

Toshiba - advances in 1Gb MRAM. Expects MRAM to take over DRAM in 2015

mram — Mon, 02 Jun 2008 10:42:12 -0500

Toshiba is still working on 1Gb MRAM chips, and it's "almost ready". They are using Spin-RAM (STT-RAM), like IBM.

Toshiba's projections sees MRAM taking over DRAM in 2015.

Elpida and Qimonda talking about a next-gen memory joint venture

mram — Sun, 27 Apr 2008 00:44:39 -0500

Elpida and Qimonda are discussing joint development of Phase-change RAM (PRAM) and also magneto-resistive RAM (MRAM) together with other potential technologies such as Si through-hole electrode technology. The two DRAM-making companies are talking about a merger.

Shin-Etsu Chemical develops the world's largest-class permanent magnet-type magnetic circuit

mram — Thu, 10 Apr 2008 09:57:14 -0500

Shin-Etsu Chemical has succeeded in developing a large-size magnetic circuit which will be the world's largest-class permanent magnet-type magnetic circuit. Its total weight is about 10 tons, and it will be used mainly in manufacturing-process applications, such as for the making of next-generation MRAM semiconductors and MR (Magneto Resistive) sensors.

Hynix licenses Grandis' STT-RAM technology

mram — Wed, 02 Apr 2008 00:50:28 -0500

Hynix Semiconductor Inc. and Grandis Inc. have signed a license agreement for memory products involving Grandis' patents and intellectual property (IP) in the spin-transfer torque random access memory (STT-RAM) arena.

Hynix and Grandis have also entered into a collaborative agreement to jointly integrate Grandis' STT-RAM technology into Hynix' future memory products. Technical teams from both companies will work together to implement Grandis' STT-RAM technology, including magnetic tunnel junction (MTJ) materials and structures.

Micromem looks to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs

mram — Tue, 26 Feb 2008 00:49:46 -0600

Micromem Technologies is pleased to announce the company has significantly enhanced its product offering as a result of the foundry success with its MRAM design. With the success of the GaAs version the company can now look to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs. Micromem plans to announce market release dates for each memory option in the future. The company’s sales and marketing effort is now being divided between MRAM and sensors.

Micromem also announces that its foundry success has enabled the company to explore the lucrative magnetic sensor market. The ultra low power, high sensitivity Hall cross sensor, is a strategic component of the non-volatile random access memory design. Based on business development contacts and sharing foundry results with key verticals, Micromem has now expanded its portfolio into the following key markets:

Job openings in nanotech: VP of MRAM, VP of NVM

mram — Sun, 24 Feb 2008 00:02:39 -0600

We have been informed of two interesting job openings:

A fully funded startup in the MRAM space is looking for a VP of engineering
Another startup is looking for a VP of NVM, MRAM experience is a plus

If you are interested you can contact:

Nick Meyler

Micromem Technologies Inc. Announces a High Density Array Magnetic Anomaly Sensor Development Plan

mram — Wed, 20 Feb 2008 00:01:50 -0600

Micromem Technologies is pleased to announce its Magneto-resistive random access memory (MRAM) is a highly probable candidate for the universal memory, characterized mainly by high speed (read/write), high density and non-volatility. Micromem has designed a new process architecture for MRAM. We are pleased to announce that our foundry tests have demonstrated a number of valuable advantages for a magnetic-based sensor and memory device: including high sensitivity, thermal stability and simplicity and low cost manufacturing.