Micromem

Micromem ships first production level hall sensors for client testing

mram — Tue, 01 Jul 2008 01:01:45 -0500

Micromem Technologies is pleased to announce the first production level shipments of its patented magnetic sensor which is based on the Hall Effect. The sensors have been produced in traditional package configuration and are being distributed to key clients for field evaluation. This is an integral component of the company's MRAM product line.

BAE Systems to Develop Nano-Sensor Technology in Agreement with Micromem

mram — Tue, 01 Jul 2008 01:00:03 -0500

BAE Systems, under an agreement with Micromem, will co-produce nano-sensor technology that will leverage both companies’ expertise for use in military, commercial, and homeland security applications.

As a foundry and business development partner with Micromem Applied Sensor Technologies, BAE Systems’ Microelectronics Center in Nashua, New Hampshire, will further develop Micromem designs and manufacturability for advanced magnetic random-access memory (MRAM) products. The goal is to bring the designs to maturity and begin production of gallium arsenide-based nano-sensors that offer features such as very high-speed and low-power capability, radiation-hardness, and overall robustness.

Micromem projects revenue from early pilot orders for magnetic sensors in 2008

mram — Thu, 24 Apr 2008 00:04:20 -0500

Micromem Technologies is pleased to announce that it is fully engaged and conducting business development work in two foundries in the United States. The company expects to enter into a third foundry contract by Q3 2008. Joseph Fuda, the company’s CEO, stated, “With our potential clients beginning to validate our technology and moving towards specific productization plans for their product lines, it is imperative that we continue to have full access to foundry operations. This will ensure the process of moving from constant innovation to product revenue is accelerated.”

BAE Systems to productize Micromem's patented technology

mram — Tue, 01 Apr 2008 09:56:45 -0500

Micromem Technologies is pleased to announce that BAE Systems, the premier global defense and aerospace company, is in the process of transferring the Micromem's MRAM and sensor technology to its Nashua New Hampshire foundry facility. BAE Systems plans to complete the productization of Micromem's technology over the coming months. The focus is for the planned integration of Micromem's patented technology into the BAE Systems military platforms and product pipeline.

Micromem looks to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs

mram — Tue, 26 Feb 2008 00:49:46 -0600

Micromem Technologies is pleased to announce the company has significantly enhanced its product offering as a result of the foundry success with its MRAM design. With the success of the GaAs version the company can now look to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs. Micromem plans to announce market release dates for each memory option in the future. The company’s sales and marketing effort is now being divided between MRAM and sensors.

Micromem also announces that its foundry success has enabled the company to explore the lucrative magnetic sensor market. The ultra low power, high sensitivity Hall cross sensor, is a strategic component of the non-volatile random access memory design. Based on business development contacts and sharing foundry results with key verticals, Micromem has now expanded its portfolio into the following key markets:

Micromem Technologies Inc. Announces a High Density Array Magnetic Anomaly Sensor Development Plan

mram — Wed, 20 Feb 2008 00:01:50 -0600

Micromem Technologies is pleased to announce its Magneto-resistive random access memory (MRAM) is a highly probable candidate for the universal memory, characterized mainly by high speed (read/write), high density and non-volatility. Micromem has designed a new process architecture for MRAM. We are pleased to announce that our foundry tests have demonstrated a number of valuable advantages for a magnetic-based sensor and memory device: including high sensitivity, thermal stability and simplicity and low cost manufacturing.

Micromem Technologies Inc. First Foundry MRAM Manufactured

mram — Sun, 23 Dec 2007 01:03:57 -0600

Micromem Technologies is pleased to announce that it has successfully manufactured foundry grade fully functioning MRAM cells. This culminates an intensive three-year research and development proof of concept phase followed by a foundry phase focused on manufacturability and scalability of our MRAM product. The first phase of the foundry process will be completed in January 2008. Our development team at Strategic Solutions is to be applauded for working closely with the California -based foundry Global Communication Services (“GCS”) to meet the aggressive schedule that the Company initiated in the fall of 2007.

Micromem - Functioning Manufactured MRAM by the End of 2007

mram — Wed, 14 Nov 2007 00:23:35 -0600

Micromem is pleased to announce another major milestone has been met in the manufacturing of their MRAM. Based on this early success the foundry has been authorized to assemble the complete memory structure.

The Hall Sensor forms an integral component of the Micromem MRAM design. The Hall Sensor is used to measure the external field of a magnet whose magnetization can be reversed by generating a current in a coil.

Micromem has closed additional $400,000 financing

mram — Tue, 06 Nov 2007 00:04:47 -0600

Micromem Technologies Inc. (OTC BB: MMTIF) is pleased to announce that it has raised $400,000 by way of arms length private placements ranging from $0.45-$0.48 per share. The shares issued will be subject to Rule 144. These funds are in addition to the previously announced financing dated October 18, 2007. These funds will be used to further the company's effort to commercialize its patented MRAM technology for a wide variety of uses beyond RFID applications. No commission was paid on this financing.

Micromem Notes Foundry Milestone - Successful Magnetic Production Scaling

mram — Fri, 02 Nov 2007 10:31:31 -0500

Micromem Technologies is pleased to announce a material progress update on our commercialization of our MRAM. Micromem and Global Communication Semiconductors, Inc. (GCS) have successfully patterned and processed our own magnetic yoke design. This is significant in that this production-level process produced an extremely clean magnetic storage element (below, less than 1/10th the width of a human hair) while at the same time starting a march down a path of memory size reductions and lower cost-per-bit. The scanning electron microscope image illustrates the superior quality of the GCS foundry and its team of engineers.