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MRAM research or technical information

Toshiba - advances in 1Gb MRAM. Expects MRAM to take over DRAM in 2015

Toshiba is still working on 1Gb MRAM chips, and it's "almost ready". They are using Spin-RAM (STT-RAM), like IBM.

Toshiba's projections sees MRAM taking over DRAM in 2015.

Read more here (TechRadar) 

06/02/2008

Elpida and Qimonda talking about a next-gen memory joint venture

Elpida and Qimonda are discussing joint development of Phase-change RAM (PRAM) and also magneto-resistive RAM (MRAM) together with other potential technologies such as Si through-hole electrode technology. The two DRAM-making companies are talking about a merger.

04/27/2008

Shin-Etsu Chemical develops the world's largest-class permanent magnet-type magnetic circuit

Shin-Etsu Chemical has succeeded in developing a large-size magnetic circuit which will be the world's largest-class permanent magnet-type magnetic circuit. Its total weight is about 10 tons, and it will be used mainly in manufacturing-process applications, such as for the making of next-generation MRAM semiconductors and MR (Magneto Resistive) sensors.
04/10/2008

Hynix licenses Grandis' STT-RAM technology

Grandis logo updatedHynix logoHynix Semiconductor and Grandis have signed a license agreement for memory products involving Grandis' patents and intellectual property (IP) in the spin-transfer torque random access memory (STT-RAM) arena.

Hynix and Grandis have also entered into a collaborative agreement to jointly integrate Grandis' STT-RAM technology into Hynix' future memory products.

04/02/2008

Micromem looks to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs

Micromem logoMicromem Technologies is pleased to announce the company has significantly enhanced its product offering as a result of the foundry success with its MRAM design. With the success of the GaAs version the company can now look to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs. Micromem plans to announce market release dates for each memory option in the future. The company’s sales and marketing effort is now being divided between MRAM and sensors.

Micromem also announces that its foundry success has enabled the company to explore the lucrative magnetic sensor market. The ultra low power, high sensitivity Hall cross sensor, is a strategic component of the non-volatile random access memory design. Based on business development contacts and sharing foundry results with key verticals, Micromem has now expanded its portfolio into the following key markets:

02/26/2008

Job openings in nanotech: VP of MRAM, VP of NVM

We have been informed of two interesting job openings:

  • A fully funded startup in the MRAM space is looking for a VP of engineering
  • Another startup is looking for a VP of NVM, MRAM experience is a plus
If you are interested you can contact:

Nick Meyler

02/24/2008

Micromem Technologies Inc. Announces a High Density Array Magnetic Anomaly Sensor Development Plan

Micromem logoMicromem Technologies is pleased to announce its Magneto-resistive random access memory (MRAM) is a highly probable candidate for the  universal memory, characterized mainly by high speed (read/write), high density and non-volatility. Micromem has designed a new process architecture for MRAM. We are pleased to announce that our foundry tests have demonstrated a number of valuable advantages for a magnetic-based sensor and memory device: including high sensitivity, thermal stability and simplicity and low cost manufacturing.

02/20/2008

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