You are here

Spin Transfer Technologies starts sampling 80nm OST-MRAM chips

Jan 26, 2017

Spin Transfer Technologies announced that it started to deliver fully functional ST-MRAM samples to customers in North America and Asia.

The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.

Avalanche to commence volume pMTJ STT-MRAM production in early 2017

Oct 21, 2016

STT-MRAM developer Avalanche Technology logo Avalanche Technology announced that volume production of its pMTJ STT-MRAM chips on 300 mm wafers will begin in early 2017. Avalanche started to sample 32Mb and 64Mb STT-MRAM chips in 2015

Avalanche has entered into a manufacturing agreement with Sony Semiconductor Manufacturing Corporation (SSMC) for this volume production. Avalanche targets several markets, including Storage, Automotive, IoT and embedded applications. Avalanche will offer discrete MRAM chips from 4Mb to 64Mb in size.

Spin Transfer Technologies fabricated 20nm OST-MRAM MTJs, preparing to deliver samples

Sep 27, 2016

Spin Transfer TechnologiesSpin Transfer Technologies (STT) announced that it fabricated 20nm perpendicular MRAM magnetic tunnel junctions (MTJs) based on the company's Orthogonal Spin Transfer MRAM (OST-MRAM).

STT is now preparting to deliver OST-MRAM samples to select customer, following requests from "certain major semiconductor and systems companies". The company is processing more than 40 wafer lots at its R&D fab in Fremont, California.

Samsung Foundry to start offering STT-MRAM by 2019

Sep 23, 2016

Samsung logoBack in July 2016 (yes, we missed that one, but better late than never), Samsung Foundry's business development chief Kelvin Low said that the company is set to offer STT-MRAM on its 28nm FDSOI manufacturing process by the end of 2018.

To be more precise, the STT-MRAM in 2018 will be on a not-finalized process (what Samsung calls Risk Production Phase) - and real volume production will only begin in 2019. Samsung will be pushing its eFlash 28nm production before STT-MRAM will be available - but the company expects MRAM to be a favorite in the long term.

Global Foundries to offer Everspin's PMTJ STT-MRAM as an embedded memory solution

Sep 16, 2016

Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory. Everspin licensed its technology global foundries which will offer this as part of its 22FDX platform.

Global Foundries 22nm eMRAM slide

The 22FDX platform targets emerging applications such as battery powered consumer devices, IoT, Advanced Driver Assistance Systems (ADAS) and Vision Processing. Customers of Global Foundries will now be able to embed MRAM memory in next-generation SoC and MCU based producers.

Everspin starts shipping perpendicular-MTJ based ST-MRAM chip samples

Aug 09, 2016

Everspin announced that it has started shipping samples based on its perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. The first chip is the EMD3D256MB - a 256Mb DDR device. This is Everspin's 3rd-gen MRAM technology.

Everspin pMTJ EMD3D256MB photo

The pMTJ ST-MRAM offers improved performance, higher endurance, lower power, and better scalability compared to previous MRAM and ST-MRAM products. The company (together with GlobalFoundries) is now focused on the production ramp of the 256Mb MRAM and is working on a scaled-down 1Gb version.

Everspin starts sampling 256Mb ST-MRAM chips, plans 1Gb chips by the end of 2016

Apr 15, 2016

Everspin announced that it started shipping 256Mb ST-MRAM samples to customers. Everspin also plans to increase the density and sample 1Gb ST-MRAM chips later this year. The new chips demonstrate interface speeds comparable to DRAM, with DDR3 and DDR4 interfaces. Volume production is expected "soon".

Everspin EMD3D256 256Mb ST-MRAM photo

The new EMD3D256 chips are based on Everspin's proprietary magnetic tunnel junction (pMTJ) spin torque technology - and the company expects the new technology to enable it to produce ST-MRAM in lower geometries - and higher densities beyond 1Gb in the future.

Everspin started to produce MRAM chips with a Quad-SPI interface

Mar 06, 2016

Everspin announced a new MRAM chip, the MR10Q010 - a 1Mb QSPI MRAM. Everspin says that at 104 Mhz, this is features the fastest non-volatile write speeds in the industry. The MR10Q010 is now available in both SOIC and BGA packages.

Everspin MR10Q010 1Mb Quad SPI MRAM

Everspin says that the new chip is suitable for applications such as enterprise RAID controllers - that can use the MR10Q010 as a journal memory that records continuously updated system metadata.

Everspin launches new MRAM chips for the automotive market

Feb 20, 2016

Everspin launched two new MRAM chips for the automotive market. The first chip is a 16Mb one, that can operate in a wide temperature range (-40 to 125 Celsius) and comes in both x8 and x16 IO configurations. The new chip features fast 45 ns read and write cycle times in a parallel asynchronous SRAM-like interface.

Everspin 128Kb automotive MRAM photo

The second chip is a 128Kb SPI MRAM in both the Grade 1 and Grade 3 (-40C to 105 Celsius) ranges. This serial interface MRAM fits in a low pin count DFN package with 8 pins.

Coughlin sees the MRAM market growing to over $1.3 billion in 2020

Nov 15, 2015

A new report from Coughlin Associates says that in the near future we will see dramatic changes in the memory market as as fast non-volatile memories augment and eventually replace volatile memory.

Memory technology shipping storage capacity forecast (Coughlin)

Coughlin sees MRAM (and STT-MRAM) annual shipping capacity rising from 240TB in 2014 to between 15 and 35 PB in 2020. MRAM and STT-RAM revenues are expected to increase from about $300 million in 2014 to between $1.35 and $3.15 billion by 2020.