MRAM production

Freescale sold over 1million MRAM chips, has 45 customers, planning to reduce price

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Freescale says they have sold over 1 million MRAM chips since 2006 (when it was introduced). They are planning to reduce the cost, and "increase its uses" to boost sales.


Micromem Technologies Inc. First Foundry MRAM Manufactured

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Micromem Technologies is pleased to announce that it has successfully manufactured foundry grade fully functioning MRAM cells. This culminates an intensive three-year research and development proof of concept phase followed by a foundry phase focused on manufacturability and scalability of our MRAM product. The first phase of the foundry process will be completed in January 2008. Our development team at Strategic Solutions is to be applauded for working closely with the California -based foundry Global Communication Services (“GCS”) to meet the aggressive schedule that the Company initiated in the fall of 2007.


Freescale’s award-winning MRAM achieves industrial and extended temperature qualification

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Freescale Semiconductor today announced the industrial and extended temperature qualification of its award-winning magnetoresistive random access memory (MRAM) products. Freescale's entire 1Mbit, 2Mbit and 4Mbit MRAM families are now available at commercial (0 C to 70 C), industrial (0 C to 85 C) and extended (-40 C to105 C) temperature ranges.


Micromem Notes Foundry Milestone - Successful Magnetic Production Scaling

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Micromem Technologies is pleased to announce a material progress update on our commercialization of our MRAM. Micromem and Global Communication Semiconductors, Inc. (GCS) have successfully patterned and processed our own magnetic yoke design. This is significant in that this production-level process produced an extremely clean magnetic storage element (below, less than 1/10th the width of a human hair) while at the same time starting a march down a path of memory size reductions and lower cost-per-bit. The scanning electron microscope image illustrates the superior quality of the GCS foundry and its team of engineers.

TDK to mass-produce high-capacity MRAM chips in 2008

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After partnering with IBM in August, TDK now plans to produce high-capacity MRAM chips in 2008. It plans to make even higher-density chips in 2011.

Read more here (TradingMarkets.com)


Micromem Engages Global Communication Semi as its Foundry in the next step of commercialization

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Micromem Technologies is pleased to announce that it has engaged Global Communication Semiconductors, Inc.

Freescale adds 2Mbit devices to growing MRAM portfolio

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Freescale Semiconductor, a global leader in the design and manufacture of embedded semiconductors, has introduced a series of 2Mbit magnetoresistive random access memory (MRAM) devices, providing designers a broader portfolio of MRAM products for a range of commercial, industrial and automotive applications. The 2Mbit MRAM replaces two current 1Mbit nvRAM parts with a single device designed to help reduce system cost and board area.


Freescale expands MRAM Line with World's First 4Mbit Extended Temperature nvRAM and Freescale's First 1Mb Commercial Product

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Freescale Semiconductor has expanded its award-winning MRAM family with the worlds first 3-volt 4Mbit extended temperature range (-40 to +105°C) non-volatile RAM (nvRAM) product. This device enables entry into more rugged application environments, such as industrial, military and aerospace and automotive designs.

Freescale also has broadened its commercial MRAM line with a 1Mbit device, offering system designers a density option that addresses the sweet spot of the mainstream embedded market. In addition, Freescale plans to expand its MRAM product family to include a total of nine commercial, industrial and extended temperature products during the third quarter of 2007.


Honeywell Introduces New Microelectronic Product Line, MRAM product

Honeywell announced today that it has developed a new line of sophisticated electronic components designed specifically to meet the stringent reliability requirements for computers operating in technically advanced military and commercial aerospace conditions.


Honeywell develops non-volatile MRAM for strategic space applications

Honeywell has developed a one-million bit non volatile static memory component for strategic space electronics applications (see related story). Built with Honeywell's radiation-hardened, silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology, and combined with magnetic thin films, the new memory component provides high reliability for low-voltage systems operating in radiation environments.
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