Taiwan-based Industrial Technology Research Institute (ITRI) announced an agreement with the University of California, Los Angeles (UCLA) to co-develop Voltage-Control MRAM (VC-MRAM) technologies.

ITRI says that VC-MRAM is a type of SOT-MRAM that offers improved performance - 50% higher writing speed and 75% less energy consumption. VC-MRAM is said to be ideal for AIoT and automotive industry applications. The partnership is expected to strengthen the link between both parties and accelerate the R&D and industrialization of new memory technologies.

Researchers from Samsung's Advanced Institute of Technology (SAIT), have demonstrated what they say is the world’s first in-memory computing based on MRAM, targeting next-generation AI chips.

The researchers explain that In-Memory computing is a new paradigm that seeks to perform both data storage and data computing in a memory network. In such a computing system, a large amount of data, stored in the memory network, can be executed in a highly parallel manner. Power consumption in such systems is substantially reduced.

Advanced aerospace and defense mission-critical electronics developer CAES announced that its radiation-hardened microelectronic devices are on their way to Jupiter, as part of NASA’s Lucy Mission.

Lucy’s payload is comprised of a high-resolution visible imager, an optical and near-infrared imaging spectrometer and a thermal infrared spectrometer. CAES says that the payloaduses two memory devices - 16 Mbit SRAM and 16 Mbit MRAM. The company's UT8MR2M8 chip (shown above), basedon Everspin's MRAM, is a high performance, space grade, 16Mb non-volatile MRAM device with proven flight heritage.

Researchers from Northwestern University developed a new method of building artificial neural networks using MRAM-based stochastic computing units. The researchers say that this design could enable AI devices that are highly energy efficient.

Embedded MRAM technologies are being adopted at major foundries, which enable the use of these technologies for unconventional computing architectures that use the stochasticity of MRAM cells (rather than their nonvolatility), to perform energy-efficient computing operations. MRAM cells exhibit stochastic switching characteristics, which is a challenge for reliable memory devices. But for neural networks, this can be taken advantage of if the MTJs are appropriately designed.

pMTJ STT-MRAM developer Avalanche Technology announced that NexAIoT has adopted the company's 8Mbit MRAM (P-SRAM) products in its new fanless NISE & NIFE series industrial computers.

NexAIoT says that Avalanche's P-SRAM non-volatile memory provides the performance and reliability needed for its computers. The P-SRAM helps prevent data loss during power failures.

Everspin Technologies announced that Lucid Motors has designed-in the company's 256 Kb MRAM into its master powertrain system for its Lucid Air all-electric luxury sedan.

Everspin's The MR25H256AMDF MRAM device is designed for automotive applications and is qualified to the AEC-Q100 Grade 1 standard for use in demanding memory applications that require extreme reliability in critical data capturing systems.

pMTJ STT-MRAM developer Avalanche Technology announced its third-generation 1Gb space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices. The company says that these new devices enable customers to design unified memory architecture systems for high reliability aerospace applications, in extremely small form factors.

Avalanche's 2nd-Gen P-SRAM evaluation kit

The new Parallel x32 Space Grade series is offered in 512Mb, 1Gb, 2Gb and 4Gb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. Data is always non-volatile with >10^14 write cycles endurance and 10-year retention at 125°C. All four density options are available in a small footprint 142-Ball FBGA (17mm x 11mm) package.

pMTJ STT-MRAM developer Avalanche Technology announced that it is now shipping new space-grade parallel asynchronous x16-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM technology.

Avalanche says that its STT-MRAM devices are smaller and more efficienct compared to Toggle MRAM based products, currently adopted in aerospace applications. The Parallel x16 Space Grade series is offered in 16Mb, 32Mb and 64Mb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. All three density options currently in production and available within industry standard lead times.

Ambiq's Apollo4 System-on-Chip family, with its onboard MRAM memory, has received the Flash Memory Summit 2020's Best of Show Award for the Most Innovative AI Application.

Ambiq's Apollo4 SoC was recognized for its low power package integrated with MRAM for high performance.

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its MRAM Persistent SRAM (P-SRAM) products for industrial touch screen applications developed by M2I corporation.

M2I is using Avalanche’s 4Mbit High Performance MRAM chips for its its popular TOP Human Machine Interface products used in industrial automation systems.