Competing technologiesScientists created a plastic memory device that uses electron spin to read/write dataScientists from Ohio University has created a new spintronics memory device from plastic. It’s simply a thin strip of dark blue organic-based magnet layered with a metallic ferromagnet and connected to two electrical leads. Still, the researchers successfully recorded data on it and retrieved the data by controlling the spins of the electrons with a magnetic field. They say that the new device is a bridge between today’s computers and the all-polymer, spintronic computers that the researchers hope to eventually create.
Via Spintronics-Info
Researches design new frequency-controlled magnetic vortex memoryResearchers have designed a new kind of magnetic memory called frequency-controlled magnetic vortex memory. It takes advantage of magnetic vortices' ability to store binary information as positive or negative core polarities, which can be controlled by simply changing the frequency of the rotating vortex cores of the nanodots.
The concept of using magnetic nano-objects to store information for magnetic-RAM is already known, but it’s been difficult to find a mechanism to reverse the magnetization inside individual nano-objects. The researchers achieved this reversal by using microwave pulses in combination with a static magnetic field. In this scheme, large and small rotating core frequencies are associated with positive and negative core polarities, respectively. In a positive core polarity, the core is parallel to the applied magnetic field, while in a negative core polarity, the core is antiparallel to the applied magnetic field. An extremely sensitive magnetic resonance force microscope (MRFM) is used to address the resonant frequency of magnetic nanodots’ vortex core rotations, allowing the researchers to control the polarity states of individual nanodots.
Macronix extends their phase-change memory alliance with IBMDigitimes reports that Macronix has signed an agreement with IBM to continue to co-develop phase-change memory (PCM) technology. The company said it is optimistic about the outlook for PCM, which is likely to be a successor to all memory products used in computers and consumer electronics devices.
Numonyx to sample 1-Gbit phase-change memory chips in 1Q 2010Numonyx say that they are ready to start sending out samples for customers for their 1-Gbit Phase-Change memory chips in the first quarter of 2010. Volume production will start later in 2010. Via EETimes
Intel and Numonyx announced a new higher-density phase change memory technologyIntel and Numonyx have announced a new memory technology that "paves the way for scalable, higher density phase change memory (PCM) products". They have created a 64Mb chip that enables to stack multiple layers of PCM arrays in a single die. They cal it PCMS (phase change memory and switch). Via Engadget
Samsung has started to produce 512Mb Phase-Change memorySamsung Electronics announced today that it has begun production of 512Mb Phase-Change Memory (PRAM). It is targeted for mobile devices. It features high-performance and low power. Samsung says that a handset with PRAM can extend its lifetime over 20%. The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash. Via TechOn
4DS claims RRAM breakthroughStartup 4DS has emerged from stealth mode and claims to have made a major breakthrough in resistive random access memory (RRAM) technology. They also announced a new round of funding, and they are looking for a manufacturing partner to bring it's "4DS memory" into mass production. RRAMs have been the subject of academic research since the discovery of the electrical pulse induced resistance change effect in such films around 2000.
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