ToshibaToshiba - advances in 1Gb MRAM. Expects MRAM to take over DRAM in 2015Toshiba is still working on 1Gb MRAM chips, and it's "almost ready". They are using Spin-RAM (STT-RAM), like IBM. Toshiba's projections sees MRAM taking over DRAM in 2015.
Toshiba develops new MRAM device which opens the way to giga-bits capacityToshiba Corporation today announced important breakthroughs in key technologies for MRAM. The company has successfully fabricated a MRAM memory cell integrating the new technologies and verified its stable performance.
In making these major advances, Toshiba applied and proved the spin transfer switching and perpendicular magnetic anisotropy (PMA) technologies in a magnetic tunnel junction, which is a key component in the memory cell.
Toshiba and NEC Develop World's Fastest, Highest Density MRAMToshiba Corporation and NEC Corporation today announced that they have developed a magnetoresistive random access memory (MRAM) that combines the highest density with the fastest read and write speed yet achieved. The new MRAM achieves a 16-megabit density and a read and write speed of 200-megabytes a second, and also secures low voltage operation of 1.8V.
MRAMs shift paths at VLSI forum
Long considered a potential next-generation memory, magnetoresistive RAM was in the spotlight at last week's VLSI symposium.
TSMC, NEC, Toshiba describe novel MRAM cells
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.
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