Samsung

Hynix and Samsung to co-develop STT-RAM in a $40 million project

The Korean Government has decided to fund STT-RAM research for Hynix and Samsung in a $40 million project. The government will pay around half of the sum for the project, which is intended to run till 2014. The project calls for the government to work with Samsung and Hynix together for research and development on STT-MRAM chips. Korea aims to control around 45% of the 30-nano type memory chip market by 2015.

The companies have already opened a new laboratory at Hangyang University's fusion technology center. It is already equipped with a fully operational 300mm magnetic thin film deposition system and other chip-making facilities.

Via YonHap news

11/26/2009

Samsung has started to produce 512Mb Phase-Change memory

Samsung Electronics announced today that it has begun production of 512Mb Phase-Change Memory (PRAM). It is targeted for mobile devices. It features high-performance and low power. Samsung says that a handset with PRAM can extend its lifetime over 20%.

The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.

Via TechOn

09/23/2009

Samsung and Hynix has started joint development of STT-RAM

Samsung and Hynix have started to work on 30-nano STT-RAM. They hope to have chips out by the end of the year (probably samples only...). It appears that the Korean government is helping to fund the project. Details are a bit sketchy, we only have the information in Korean.