Samsung
Samsung and Hynix to launch STT-MRAM JV in September, expect the chip to mature around 2012
Submitted by mram on Wed, 25/06/2008 - 05:51. Hynix | MRAM Manufacture | Samsung | Technical / Research![]()
Samsung and Hynix are to launch their STT-RAM JV in September (after having announced their intentions in January 2008).
Samsung and Hynix to jointly develop STT-MRAM
Submitted by mram on Thu, 24/01/2008 - 16:51. Hynix | Samsung | Technical / Research![]()
Samsung Electronics and Hynix Semiconductor, the world's two largest memory chip manufacturers, have agreed to join hands to develop the next generation of semiconductors so that South Korea can stay competitive with its foreign rivals.
Under the three-stage plan A total of about 50M$ will be spent to design and build futuristic chips such as the spin-torque-transfer magnetic-random-access-memory (STT-MRAM) and various non-volatile memory devices.
Samsung to create new chip markets
Submitted by mram on Sat, 19/11/2005 - 06:00. Samsung | Technical / Research | Competing technologies
For future technologies Samsung is also working on new technologies such as phase-change random access memory (RAM), magnetic RAM, ferroelectric-RAM.
