Renesas

In addressing the need for next-generation high-density on-chip non-volatile memory Technology, Hitachi, Ltd. and Renesas Technology Corp. today announced the development of a 512-kbyte (4-Mbit equivalent) phase change memory module operating at a 1.5-V power supply voltage, which achieves 416-kbyte/sec high-speed write and read speeds with a 20-nanosecond access time. Using the previously developed "low-power phase change memory cells" with a 100-uA (micro(2)-ampere) write current, the two companies developed a peripheral circuit Technology to enable the high-speed write and read operations.

Renesas Technology and Grandis have agreed to collaborate on the development of 65 nm process MRAM employing spin torque transfer writing technology. Renesas Technology will start to ship microcomputers and SoC products incorporating 65 nm process STT-RAM(TM) in the near future.
"We are currently doing development work on MRAM technology employing high-speed and highly reliable conventional magnetic field data writing technology. We intend to use this technology in products such as microcomputers and SoC devices with on-chip memory," said Tadashi Nishimura, Deputy Executive General Manager of the Production and Technology Unit at Renesas Technology Corp. "Nevertheless, in view of factors such as the need to reduce writing instability and lower current requirements, we feel that spin torque transfer is a more appropriate technology for future MRAM produced using ultra-fine processes. Grandis has world-class spin torque transfer technology. We are confident that by fusing their technology with our production processes we will be able to develop a universal memory that combines high performance and excellent reliability."

Prospect of High-Speed Operation of over 143 MHz at 1.2 V Operating Voltage and High Reliability of over One Trillion Rewrites.
Renesas Technology Corp. today announced the development of a high-speed, high-reliability MRAM (Magnetoresistive Random Access Memory) technology for SoC (system-on-a-chip) use. Using this technology, Renesas Technology fabricated a prototype 1-Mbit MRAM employing a 130 nm (nanometer) CMOS process.
Investigation showed the prospect of high-speed operation with an operating frequency of 143 MHz or above at a 1.2 V operating voltage, and measurements in a one-trillion-rewrites experiment confirmed that there was no degradation.