Renesas

Renesas plans to start shipping MRAM samples in 2009. These products will be based on 90nm tech. Last month they said they will ship products in 2010. So samples in 2009, products in 2010. Renesas will also manufacture microcontrollers with embedded MRAM, also to be sold in 2010.

Renesas already has made 130nm MRAM, but they want to make it cheaper and with better power consumption, and this is why they're going to make then at 90nm. 

Renesas has announced the new R&D roadmap. The company plans to raise its development efficiency and provide high added-value products by reinforcing its design ability. The roadmap is primarily geared towards hardware IP. Memory IP is in there, including flash memory and MRAM.

Read more here (TechOn)

Renesas claims to have already devised a 130-nm MRAM, which is a four-level-metal technology with a cell size of 0.81-micron² and a standby current of zero.

But on its roadmap, the company will first commercialize an MRAM product, based on 90-nm technology that operates from 100-to-150-MHz. Slated for 2010, the device is geared for embedded memory applications in the company's core microcontroller market, said Katsuhiro Tsukamoto, president and chief operating officer at Renesas.

In addressing the need for next-generation high-density on-chip non-volatile memory Technology, Hitachi, Ltd. and Renesas  today announced the development of a 512-kbyte (4-Mbit equivalent) phase change memory module operating at a 1.5-V power supply voltage, which achieves 416-kbyte/sec high-speed write and read speeds with a 20-nanosecond access time.

Renesas and Grandis have agreed to collaborate on the development of 65 nm process MRAM employing spin torque transfer writing technology. Renesas Technology will start to ship microcomputers and SoC products incorporating 65 nm process STT-RAM(TM) in the near future.

Renesas today announced the development of a high-speed, high-reliability MRAM (Magnetoresistive Random Access Memory) technology for SoC (system-on-a-chip) use. Using this technology, Renesas Technology fabricated a prototype 1-Mbit MRAM employing a 130 nm (nanometer) CMOS process.
Investigation showed the prospect of high-speed operation with an operating frequency of 143 MHz or above at a 1.2 V operating voltage, and measurements in a one-trillion-rewrites experiment confirmed that there was no degradation.