NECNEC says that using their MRAM-based magnetic flip flop can help make low power standby mode
Today, for example, LCD TVs have two kinds of standby - "fast standby" which consumes as much as 15W, and 'slow standby' that may consume as low as 0.1W, but may take a few seconds to show a picture when powered back on. The MFF might make it possible to design a stand-by mode that is both fast to power on, and uses minimal power.
NEC to commercialize perpendicular MRAM chips in 2010
NEC and NEC Electronics employed a new method called "spin torque domain wall displacement write method" to reduce write current and realize microfabrication at the same time. In fact, they aim to reduce the current by as much as 90%. They were also able to increase speed to 500Mhz. This technology is not 'new', it was announced in 2007, but now they have a test chip ready.
NEC working on perpendicular MRAM
Details are not very clear as the translation is not so good... Hopefully more details will emerge soon.
NEC Develops 32Mb Embeddable MRAM NEC announced the
successful operational demonstration of a 32Mb MRAM that can be embedded in SoCs. NEC has reduced the area of control circuits in the 32Mb MRAM
design in order to achieve superior cell efficiency that enables
73% of a memory macro's area to be allocated to memory cells. This was achieved by developing write circuits, which enables greater memory capacity. The high-speed cycle time of 9ns was achieved by adopting new decoder circuits that minimize delay. Furthermore, compatibility with an asynchronous SRAM was achieved by inserting protocol transform circuits between the MRAM macro and I/O buffer circuits.
NEC makes magnetic flip flopsNEC has announced it managed to make a 1-bit Magnetic Flip Flop (MFF, as they like to call it). Unlike existing flip-flops, it does not need power to retain the value. NEC suggests using such flip-flops instead of regular ones, and using MRAM instead of SRAM and you can make a system on a chip that does not need power to store data. MRAM is better than FLASH, says NEC, because of the unlimited write cycles. NEC's MFF opereates at 1.2V or less, like regular flip-flops. The clock speed can be up to 3.5GHz.
NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHzNEC Corporation announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed. MRAM is expected to be the dominant next-generation memory technology as it realizes ultra fast operation speeds, nonvolatility - ability to retain data with the power off, and unlimited write endurance.
Verification at the SRAM speed level proves that the newly-developed MRAM could be embedded in system LSIs as SRAM substitutes in the future.
Toshiba and NEC Develop World's Fastest, Highest Density MRAMToshiba Corporation and NEC Corporation today announced that they have developed a magnetoresistive random access memory (MRAM) that combines the highest density with the fastest read and write speed yet achieved. The new MRAM achieves a 16-megabit density and a read and write speed of 200-megabytes a second, and also secures low voltage operation of 1.8V.
|
Popular stories: |
 |
 |
Copyright 2004-2010 Metalgrass software |