Micromem - Page 1

BAE Systems to productize Micromem's patented technology

Micromem Technologies is pleased to announce that BAE Systems, the premier global defense and aerospace company, is in the process of transferring the Micromem's MRAM and sensor technology to its Nashua New Hampshire foundry facility. BAE Systems plans to complete the productization of Micromem's technology over the coming months. The focus is for the planned integration of Micromem's patented technology into the BAE Systems military platforms and product pipeline.

04/01/2008

Micromem looks to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs

Micromem Technologies is pleased to announce the company has significantly enhanced its product offering as a result of the foundry success with its MRAM design. With the success of the GaAs version the company can now look to enhance its memory offerings with recently filed patents for silicon germanium and silicon designs. Micromem plans to announce market release dates for each memory option in the future. The company’s sales and marketing effort is now being divided between MRAM and sensors.

Micromem also announces that its foundry success has enabled the company to explore the lucrative magnetic sensor market. The ultra low power, high sensitivity Hall cross sensor, is a strategic component of the non-volatile random access memory design. Based on business development contacts and sharing foundry results with key verticals, Micromem has now expanded its portfolio into the following key markets:

02/26/2008

Micromem Technologies Inc. Announces a High Density Array Magnetic Anomaly Sensor Development Plan

Micromem Technologies is pleased to announce its Magneto-resistive random access memory (MRAM) is a highly probable candidate for the universal memory, characterized mainly by high speed (read/write), high density and non-volatility. Micromem has designed a new process architecture for MRAM. We are pleased to announce that our foundry tests have demonstrated a number of valuable advantages for a magnetic-based sensor and memory device: including high sensitivity, thermal stability and simplicity and low cost manufacturing.

02/20/2008

Micromem Technologies Inc. First Foundry MRAM Manufactured

Micromem Technologies is pleased to announce that it has successfully manufactured foundry grade fully functioning MRAM cells. This culminates an intensive three-year research and development proof of concept phase followed by a foundry phase focused on manufacturability and scalability of our MRAM product. The first phase of the foundry process will be completed in January 2008. Our development team at Strategic Solutions is to be applauded for working closely with the California -based foundry Global Communication Services (“GCS”) to meet the aggressive schedule that the Company initiated in the fall of 2007.

12/23/2007

Micromem - Functioning Manufactured MRAM by the End of 2007

Micromem is pleased to announce another major milestone has been met in the manufacturing of their MRAM. Based on this early success the foundry has been authorized to assemble the complete memory structure.

The Hall Sensor forms an integral component of the Micromem MRAM design. The Hall Sensor is used to measure the external field of a magnet whose magnetization can be reversed by generating a current in a coil.

11/14/2007

Micromem has closed additional $400,000 financing

Micromem Technologies Inc. (OTC BB: MMTIF) is pleased to announce that it has raised $400,000 by way of arms length private placements ranging from $0.45-$0.48 per share. The shares issued will be subject to Rule 144. These funds are in addition to the previously announced financing dated October 18, 2007. These funds will be used to further the company's effort to commercialize its patented MRAM technology for a wide variety of uses beyond RFID applications. No commission was paid on this financing.

11/06/2007

Micromem Notes Foundry Milestone - Successful Magnetic Production Scaling

Micromem Technologies is pleased to announce a material progress update on our commercialization of our MRAM. Micromem and Global Communication Semiconductors, Inc. (GCS) have successfully patterned and processed our own magnetic yoke design. This is significant in that this production-level process produced an extremely clean magnetic storage element (below, less than 1/10th the width of a human hair) while at the same time starting a march down a path of memory size reductions and lower cost-per-bit. The scanning electron microscope image illustrates the superior quality of the GCS foundry and its team of engineers.

11/02/2007