IBMMacronix extends their phase-change memory alliance with IBMDigitimes reports that Macronix has signed an agreement with IBM to continue to co-develop phase-change memory (PCM) technology. The company said it is optimistic about the outlook for PCM, which is likely to be a successor to all memory products used in computers and consumer electronics devices.
IBM shows new STT-MRAM tech with 20-fold increase in capacity, up to 64Mbit
The STT-RAM is part of the joint-research with TDK, announced in 2007 Via EETimes
IBM shows New racetrack memory technology
TDK to mass-produce high-capacity MRAM chips in 2008After partnering with IBM in August, TDK now plans to produce high-capacity MRAM chips in 2008. It plans to make even higher-density chips in 2011.
IBM teams with TDK to develop STT-RAM
New Magnetic tunnel junctions for MRAM devices patent for IBM
Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.
IBM's Magnetic Race-Track Memory
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