IBMCrocus and IBM to jointly-develop MRAM technology, sign patent license agreements
MLU is a scalable evolution of Crocus' Thermally Assisted Switching (TAS) technology, and enables practical implementation of advanced magnetic logic and memory capabilities.
IBM report advances in racetrack memory research
Racetrack memory uses electron spin to move data on nanowires at hundreds of miles per hour... IBM is not commercializing it yet, but racetrack memory has the potential to be very lower-power and high-density.
IBM, Samsung and Hynix-Grandis report STT-MRAM research progressDuring the International Electron Device Meeting (IEDM) exhibition we got some updates about STT-MRAM research done at IBM, Samsung and Hynix-Grandis (who are researching STT-MRAM together). IBM is working together with TDK and has presented a new 4-kbit perpendicular STT-MRAM array using tunnel junctions. Samsung has presented an on-axis MRAM with a novel MTJ, which they say open he way towards sub-30nm scaling. Using ferromagnetic electrode and a different MTJ structure design, Samsung think that they can scale this to a sub-20nm level.
Macronix extends their phase-change memory alliance with IBMDigitimes reports that Macronix has signed an agreement with IBM to continue to co-develop phase-change memory (PCM) technology. The company said it is optimistic about the outlook for PCM, which is likely to be a successor to all memory products used in computers and consumer electronics devices.
IBM shows new STT-MRAM tech with 20-fold increase in capacity, up to 64Mbit
The STT-RAM is part of the joint-research with TDK, announced in 2007 Via EETimes
IBM shows New racetrack memory technology
TDK to mass-produce high-capacity MRAM chips in 2008After partnering with IBM in August, TDK now plans to produce high-capacity MRAM chips in 2008. It plans to make even higher-density chips in 2011.
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