Hynix
Samsung and Hynix to launch STT-MRAM JV in September, expect the chip to mature around 2012
Submitted by mram on Wed, 25/06/2008 - 05:51. Hynix | MRAM Manufacture | Samsung | Technical / Research
Samsung and Hynix are to launch their STT-RAM JV in September (after having announced their intentions in January 2008).
Hynix licenses Grandis' STT-RAM technology
Submitted by mram on Wed, 02/04/2008 - 05:50. Grandis | Hynix | Patents | Technical / Research
Hynix Semiconductor Inc. and Grandis Inc. have signed a license agreement for memory products involving Grandis' patents and intellectual property (IP) in the spin-transfer torque random access memory (STT-RAM) arena. Hynix and Grandis have also entered into a collaborative agreement to jointly integrate Grandis' STT-RAM technology into Hynix' future memory products. Technical teams from both companies will work together to implement Grandis' STT-RAM technology, including magnetic tunnel junction (MTJ) materials and structures.
Samsung and Hynix to jointly develop STT-MRAM
Submitted by mram on Thu, 24/01/2008 - 16:51. Hynix | Samsung | Technical / Research Samsung Electronics and Hynix Semiconductor, the world's two largest memory chip manufacturers, have agreed to join hands to develop the next generation of semiconductors so that South Korea can stay competitive with its foreign rivals.
Under the three-stage plan A total of about 50M$ will be spent to design and build futuristic chips such as the spin-torque-transfer magnetic-random-access-memory (STT-MRAM) and various non-volatile memory devices.
Hynix to produce PRAM memory by 2009
Submitted by mram on Thu, 26/07/2007 - 04:52. Hynix | Competing technologiesIt aims to produce a next-generation memory chip called Phase-change Random Access Memory (PRAM) by 2009. Industry analysts expect it to become the main memory device, replacing high-density flash memories, within the next decade.
