Grandis

Hitachi's VP of engineering moves to Grandis

Mohamad Krounbi, Hitachi GST's general manager and VP of engineering has left Hitachi to join Grandis. Mohamad will be Grandis Senior VP for engineering.

Grandis has been recently awarded a $8.6 million project for STT-RAM chip development from US's DARPA.

07/26/2010

Grandis awarded $8.6 million from DARPA for a 2nd phase STT-RAM research project

The US Defense Advanced Research Projects Agency (DARPA) has awarded Grandis with a $8.6 million 2nd phase project for STT-RAM chip development. The first phase ($6.0) was received in October 2008.

Phase 2 will focus on test of verification of STT-RAM integrated memory arrays.

06/20/2010

Crocus and Grandis present their MRAM tech at the Flash Memory Summit 2009

The final day of the Flash Memory Summit started with a panel on new memory technologies.

Crocus Technologies presented their TAS MRAM design which is targeted at SRAM and flash applications. Their product compared to SRAM at a 25% smaller cell, adding Non-Volatile capability, and a zero standby current. The product compared to NAND flash by having a smaller cell and only 1X area overhead for controlling circuitry. It is currently being built on a 130nm node and can be scaled. It is targeted at Cache memory, data logging, medical instrumentation, casino gaming and industrial control applications. They are targeting several business models - selling the standard product ICs, licensing IP a process technology licensing service and providing a foundry service.

08/16/2009

Grandis Opens New Fabrication Facility for STT-RAM

Grandis today announced their 300-millimeter magnetic tunnel junction (MTJ) fabrication facility (Fab) in the US dedicated to STT-RAM. Grandis is now able to incorporate STT-RAM into its customers' most advanced semiconductor processes on 300mm wafers.

02/09/2009

Grandis Awarded DARPA Contract To Develop STT-MRAM

Grandis announced that it has been awarded $6.0 million from the Defense Advanced Research Projects Agency (DARPA) for the initial phase of research to develop spin-transfer torque random access memory (STT-RAM) chips (for the 45 nm technology node and beyond). The total value of the effort, if all phases of the development program are completed, could be up to $14.7 million over four years.

10/29/2008

Hynix licenses Grandis' STT-RAM technology

Hynix Semiconductor and Grandis have signed a license agreement for memory products involving Grandis' patents and intellectual property (IP) in the spin-transfer torque random access memory (STT-RAM) arena.

Hynix and Grandis have also entered into a collaborative agreement to jointly integrate Grandis' STT-RAM technology into Hynix' future memory products.

04/02/2008

Grandis gets new CEO, says will be soon ready to go to market

Grandis announced it has appointed Farhad Tabrizi as the company’s president and chief executive officer (CEO). Tabrizi assumes the position from William Almon, Grandis co-founder, who remains a major shareholder.

01/28/2007