Researchers developed an ultra low power BiSb-based SOT MRAM device

Researchers from the Tokyo Institute of Technology developed an ultrahigh-efficiency SOT magnetization switching in fully sputtered BiSb(Co/Pt) multilayers with large perpendicular magnetic anisotropy (PMA).

The new device offers a large spin Hall angle and high electrical conductivity, thus satisfying all the three requirements for SOT-MRAM implementation. The researchers managed to achieve robust SOT magnetization at a low current density despite the large PMA field.

This research demonstrates the potential of BiSb topological insulators for ultralow power SOT-MRAM and other SOT-based spintronics devices.