Researchers from the Physikalisch-Technische Bundesanstalt (PTB) developed new technology that can make MRAM much faster - from about 400Mbit/s data rate to 2Gbit/s. According to PTB, the new tech will also reduce power consumption and thermal load and will make the MRAM chip more reliable (reduce the bit error rate). PTB has patented this technology and are looking to find an industrial partner to develop and manufacture MRAM chips.
PTB has integrated ballistic bit triggering into the MRAM cell. This basically means that their technology allows changing (writing) one MRAM cell without affecting the cells around it - which reduces error rates. Here's how they describe it: "The (magnetic) pulse ensures that the magnetization of a cell which is to be switched performs half a precision rotation (180°), while a cell whose storage state is to remain unchanged performs a complete precision rotation (360°). In both cases, the magnetization is in the state of equilibrium after the magnetic pulse has decayed, and magnetic excitations do not occur any more."