Researchers from France's SPINTEC/CEA developed a a new multi-bit MRAM storage paradigm that may enable a large density boost for MRAM devices. The researchers achieved up to 4 bits per cell on 110-nm devices.
Multi-bit per cell relies on multiple-voltage levels that correspond to various magnetic configurations. this is readable by key features of the electrical response (extrema points).
This research used Crocus' Magnetic Logic Unit (MLU) technology. Crocus is affiliated with SPINTEC. The team now wants to develop a fully functional multi-bit MLU memory product. They also say that potentially their technology may enale up to 8 bits per cell.
Source:
Posted: Jul 24,2014 by Ron Mertens