New electron-generated magnetic field confirmed, may lead towards high-density MRAM devices

Researchers from the University of Delaware confirmed that electrons generate a magnetic field in a ferromagnetic material This new field does not radiate beyond the ferromagnetic material and so may lead towards high-density MRAM memory cells (in current technology it is difficult to shield the magnetic fields between memory cells).

In materials made from two layers of a heavy metal and a ferromagnetic material, the spin current diffuses into the ferromagnetic material. When this happens, a magnetic field is generated. This magnetic field does not radiate beyond the ferromagnetic material (unlike regular magnetic fields).




Source: Spintronics-Info


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