NVE notified of new MRAM patent
Submitted by mram on Wed, 13/12/2006 - 06:56.
NVE Corporation said that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant today of a patent relating to Magnetoresistive Random Access Memory (MRAM). The patent, titled "Magnetoresistive Memory SOI Cell," is number 7,148,531 and is the grant of a patent under the application published by the USPTO as number 2005-0242382.
NVE's invention relates to MRAM incorporating silicon-on-insulator (SOI) materials. The invention could allow smaller MRAM cells and lower power consumption by reducing the electrical current required to write data to the memory cells.
