Grandis today announced their 300-millimeter magnetic tunnel junction (MTJ) fabrication facility (Fab)
in the US dedicated to STT-RAM. Grandis is now able to incorporate STT-RAM into its
customers' most advanced semiconductor processes on 300mm wafers.
Grandis' MTJ Fab can now handle both 200mm and 300mm customer wafers. In a
multi-million dollar investment, key equipment for depositing and annealing
MTJ memory elements, the critical building blocks for STT-RAM, was purchased.
Since Grandis' new licensees are often not familiar with fabricating MTJ
elements and do not possess the associated fab equipment and know-how, the MTJ
Fab's main purpose is enable licensees to incorporate Grandis' MTJ elements
into their CMOS wafers at the earliest possible stage in the development cycle,
thereby accelerating their STT-RAM development and reducing their time-to-
market. The MTJ Fab also enables Grandis to conduct leading-edge R&D on new
magnetic materials and MTJ elements targeted at further reducing STT-RAM write
current and die size. As these new materials, structures and processes are
proven, they are transferred immediately to licensees' production fabs.
