EEPROM
Electrically Erasable, Programmable, Read-Only Memory chip. EEPROMs differ from DRAMs in that the memory stays in even if electrical power is lost. Also, the memory can be erased and reprogrammed.
FRAM
Ferroelectric RAM. A type of nonvolatile memory based on electric field orientation with nearly an infinite write capability as opposed to normal EEPROM memory, which can only be written approximately 10,000 times.
MRAM
Magnetoresistive Random Access Memory - A revolutionary memory fabricated using nanotechnology which uses electron spin to store data. MRAM has been called the “holy grail” of memory because it has the potential to combine the speed of SRAM, the density of DRAM, and the non-volatility of flash memory. Also called "Magnetic Random Access Memory."
MTJ
Magnetic Tunnel Junction. See SDT.
OUM
Ovonix Unified Memory. Ovonyx memory technology uses a reversible phase-change memory process that has been previously commercialized worldwide in rewritable CD and DVD optical memory disks. The Ovonyx array-addressed semiconductor memory technology can be used in applications such as DRAM replacements, as well as embedded applications.
SDT
Spin-Dependent Tunnel - A spintronic nanotechnology device that produces a large change in resistance through a normally insulating layer, depending on the predominant spin in a free layer. This allows electron spin to be sensed as electrical resistance for interface to conventional electronics. SDT devices use a layer as thin as a few atoms. SDT devices are at the heart of MRAM and low-field sensors. Also known as Magnetic Tunnel Junctions (MTJs) or Tunneling Magnetic Junctions (TMJs).
Spintronics
Electronic devices that exploit the spin of electrons as well as their charge. Unlike conventional electronics which is based on number of charges and their energy, and whose performance limited in speed and dissipation, spintronics is based on the direction of electron spin, and spin coupling, and is capable of much higher speed at much lower power.
STT-RAM
STT-MRAM stands for Spin-Transfer-Torque (as opposed to 'normal' MRAM, which is also called Toggle-MRAM) is a newer technology, that holds the key for high-density and low power devices.