Crocus Technology announced the development of a new STT-MRAM technology with a minimum feature size of 50nm that will deliver on the promise of using STT memory in high-density memory
applications, that will be competitive with DRAM and NOR-Flash.
Crocus' development addresses two critical problems in the implementation
of STT MRAM that have previously hampered competitiveness with other
popular memory types: memory bit density and stability. Crocus has
developed a magnetic cell with an industry leading dynamic (i.e. sub-10
nanosecond) write current level of 2x10(6) amp/cm(2), e.g. less than 100µA
write current per bit, a major milestone which will remove a significant
obstacle to bit cell scaling and density. Crocus' STT technology also
provides for industry-leading data stability.
