Hynix to produce PRAM memory by 2009
Submitted by mram on Thu, 26/07/2007 - 04:52.
Hynix aims to produce a next-generation memory chip called Phase-change Random Access Memory (PRAM) by 2009. Industry analysts expect it to become the main memory device, replacing high-density flash memories, within the next decade.
Similar entries
- Samsung and Hynix to jointly develop STT-MRAM
- Samsung and Hynix to launch STT-MRAM JV in September, expect the chip to mature around 2012
- Hynix and Numonyx to make NAND and mobile DRAM together, might drop STT-MRAM program
- Hynix licenses Grandis' STT-RAM technology
- Need for Smaller, High-speed, Ultra-high Density, Storage Devices Fostering Advances in Embedded Memories
