MRAM: Next generation memory technology

Spin Transfer Technologies create one of the fastest MRAM write-cycle devices

Researchers from NY University, together with Spin Transfer Technologies have demonstrated magnetic vector switching for current pulses as short as 100 picoseconds. This is among the shortest write times reported by developers of MRAM devices.

09/22/2009

Airbus to use Everspin's MRAM in flight control computer

Everspin announced today that Airbus has decided to use their MRAM for the flight control computer on the A350 XWB aircraft.

Airbus will use 4Mb and 16Mb MRAM chips. The MRAM will replace both SRAM and Flash components.

09/09/2009

Crocus and Grandis present their MRAM tech at the Flash Memory Summit 2009

The final day of the Flash Memory Summit started with a panel on new memory technologies.

Crocus Technologies presented their TAS MRAM design which is targeted at SRAM and flash applications. Their product compared to SRAM at a 25% smaller cell, adding Non-Volatile capability, and a zero standby current. The product compared to NAND flash by having a smaller cell and only 1X area overhead for controlling circuitry. It is currently being built on a 130nm node and can be scaled. It is targeted at Cache memory, data logging, medical instrumentation, casino gaming and industrial control applications. They are targeting several business models - selling the standard product ICs, licensing IP a process technology licensing service and providing a foundry service.

08/16/2009

QuantumWise releases new version of their MRAM simulation software

QuantumWise A/S is announcing a new release of its software package for atomic-scale simulations of nanoscale electronic and spintronic devices, Atomistix ToolKit (ATK). This code is able to compute electronic structure and transport properties (e.g. I-V characteristics) of nanoscale structures such as nanotubes, graphene, molecular electronics devices, magnetic tunnel junctions and other magnetic system, interface structures, nanowires, etc.

08/05/2009

NEC says that using their MRAM-based magnetic flip flop can help make low power standby mode

There's an interesting article at Tech-On, by NEC, on their MRAM-based magnetic flip flip (MFF). NEC say that using such flip-flops can make low power 'standby' mode for appliances (TVs, computers, portable devices...).

Today, for example, LCD TVs have two kinds of standby - "fast standby" which consumes as much as 15W, and 'slow standby' that may consume as low as 0.1W, but may take a few seconds to show a picture when powered back on. The MFF might make it possible to design a stand-by mode that is both fast to power on, and uses minimal power.

07/26/2009

Interview with Everspin's CEO

Notes:

There's an interesting interview with Everspin's CEO over at Forbes, with a good introduction to MRAM and Everspin, the potential of MRAM, the STT-RAM program at Everspin and more.

In November 2008, we have published our own interview with Everspin's COO (Dr. Saied Tehrani).

07/21/2009

New NanoMemory report by ReportLinker

ReportLinker has released a new report called NanoMemory. This report analyzes the Global Market for Nanomemory in Millions of US$. The types of Nanomemory technologies discussed in the report include: Ferroelectric Random Access Memory or FRAM, Magnetoresitive Random Access Memory or MRAM, Ovonic Unified Memory, Holographic Memory, Nano-RAM or NRAM, Molecular Memory, and Polymer memory.

Annual forecasts are provided for the period of 2010 through 2015. The report profiles 40 companies including many key and niche players worldwide.

07/15/2009