MRAM: Next generation memory technology

Spingate: a new startup to develop Perpendicular-MRAM

Spingate is a new US-based fabless company focusing on development, licensing and manufacturing of solid state memory, specifically, perpendicular MRAM.

We have talked to Dr. Alex Shukh, Spingate's co-founder, CTO and CEO. Alex explains that they have decided to focus on perpendicular MRAM because according to their estimates it does not suffer from several fundamental issues of its longitudinal (in-plane) analogue.

11/05/2009

Intel and Numonyx announced a new higher-density phase change memory technology

Intel and Numonyx have announced a new memory technology that "paves the way for scalable, higher density phase change memory (PCM) products". They have created a 64Mb chip that enables to stack multiple layers of PCM arrays in a single die. They cal it PCMS (phase change memory and switch).

Via Engadget

10/30/2009

Researchers create first MRAM-based FPGA

Researchers at the Montpellier Laboratory of Informatics, Robotics and Microelectronics (LIRMM), in France, say they have developed an MRAM-based FPGA circuit.

They use Thermally Assisted Switching (TAS)-MRAM with a small current for heating the Magnetic Junction Tunnel, allowing a higher sensitivity to magnetic fields. The magnetic field is induced by a current line above or below the junction depending on the technology.

10/02/2009

Crocus announced a new STT-MRAM technology that can compete with DRAM and NOR-Flash

Crocus Technology announced the development of a new STT-MRAM technology with a minimum feature size of 50nm that will deliver on the promise of using STT memory in high-density memory applications, that will be competitive with DRAM and NOR-Flash.

Crocus' development addresses two critical problems in the implementation of STT MRAM that have previously hampered competitiveness with other popular memory types: memory bit density and stability. Crocus has developed a magnetic cell with an industry leading dynamic (i.e. sub-10 nanosecond) write current level of 2x10(6) amp/cm(2), e.g. less than 100µA write current per bit, a major milestone which will remove a significant obstacle to bit cell scaling and density. Crocus' STT technology also provides for industry-leading data stability.

10/01/2009

Micromem's MRAM product is fully packaged and being tested

Micromem says that their Memory (MRAM) product is now complete through the Global-Communication-Semiconductor and BAE Systems foundries. The MRAM is fully packaged in arrays, and it's being tested and evaluated against standard and routine memory tests.

09/29/2009

MRAM presentation

Someone uploaded an MRAM presentation online. It explains how MRAM works, about GMR, competing technologies, advantages, applications and more.

09/27/2009

Samsung has started to produce 512Mb Phase-Change memory

Samsung Electronics announced today that it has begun production of 512Mb Phase-Change Memory (PRAM). It is targeted for mobile devices. It features high-performance and low power. Samsung says that a handset with PRAM can extend its lifetime over 20%.

The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.

Via TechOn

09/23/2009