MRAM: Next generation memory technology

Everspin introduces 1Mb 1.8V data interface MRAM for RAID storage applications

Everspin has a new prodcut - a dual-supply MRAM designed to directly interface with next-generation logic products requiring low voltage I/Os. RAID systems using advanced logic controllers operating with 1.8 volt I/Os will be able to seamlessly interface with this MRAM.

The MR0D08B dual supply MRAM product operates from a VDD main supply voltage of 3.0 to 3.6V and allows a wide, user defined I/O operating range by setting the VDDQ I/O supply voltage level from 1.65 to 3.6V. Typical applications using 1.8V logic controllers would set VDDQ at 1.8V to support direct connections between the controller and the MRAM, eliminating any requirements for level shifters. The devices are housed in a small footprint 8mm x 8mm, 48-BGA package with 0.75mm ball centers.

01/12/2010

The MRAM-Info blog is now available for the Amazon Kindle

If you have an Amazon Kindle e-reader, then you'd be happy to know that you can now read MRAM-Info directly on your Kindle. The service costs $0.99 a month.

Amazon's Kindle is a wireless e-book reader that has a free 3G connection in the US. It's got a 6" E Ink display, 2Gb of memory, and it's available now for 259$. The Kindle DX is bigger (with a 9.7" display) and costs 489$.

12/28/2009

France launches a 4.2M euro spintronics project

France has launched a large Spintronics project, with a 4.2M euro investment. It's called SPIN, and involved 11 partners. One of the project goals is magnetic FPGAs. Here's how they describe it:

The objective will be to design a magnetic FPGA which will incorporate finely distributed Magnetic Tunnel Junctions (MTJs) for non volatile storage and configuration purposes above of a CMOS core circuit. In complement of existing high density FPGAs, it will provide better versatility with intrinsic reconfigurability, instant on/off and energy saving. Such FPGAs can be used as general purpose standalone products. In the SPIN project, the FPGA will be targeted to provide intelligent processing of the magnetometers and sensors developed in objectives 2 and 3.

More information can be found here.

12/22/2009

Micromem raised $340,000 CAD

Micromem announced today that they have raised $340,000 Canadian in a private placement.

12/15/2009

Numonyx to sample 1-Gbit phase-change memory chips in 1Q 2010

Numonyx say that they are ready to start sending out samples for customers for their 1-Gbit Phase-Change memory chips in the first quarter of 2010. Volume production will start later in 2010.

Via EETimes

12/10/2009

Hynix and Samsung to co-develop STT-RAM in a $40 million project

The Korean Government has decided to fund STT-RAM research for Hynix and Samsung in a $40 million project. The government will pay around half of the sum for the project, which is intended to run till 2014. The project calls for the government to work with Samsung and Hynix together for research and development on STT-MRAM chips. Korea aims to control around 45% of the 30-nano type memory chip market by 2015.

The companies have already opened a new laboratory at Hangyang University's fusion technology center. It is already equipped with a fully operational 300mm magnetic thin film deposition system and other chip-making facilities.

Via YonHap news

11/26/2009

Everspin introduces new MRAM chips with a serial interface

Everspin is introducing a new family of MRAM products, with a Serial Peripheral Interface (SPI) bus. The new family is called MR24H and includes 256Kb, 512Kb and 1Mb products. These Everspin MRAM devices require no write delay, run at clock speeds as fast as 40 MHz and have unlimited endurance with more than 20 years data retention.